| 摘要 |
PURPOSE:To largely reduce an ON resistance by parasitically forming a bipolar transistor in which a first conductivity type source region is as an emitter, a second conductivity type base region is as a base and a first conductivity type region as a collector, thereby driving it with a large current. CONSTITUTION:A source electrode 13 is connected through a contact hole 11 to an n<+> type source region 5, a base electrode 14 is connected through a contact hole 12 and a p<+> type base contact region 4 to a p-type base region 3, and an n-p-n type bipolar transistor Q2 is parasitically formed. A resistor Rb is connected from a gate electrode 8 to a base electrode 14. When a positive voltage is applied to a drain electrode 15, a channel 6 is formed, and a current flows in a path through an n<+> type substrate 2 to the electrode 15. On the other hand, in the region of the transistor, an electron current 18 flows in a path through the resistor Rb, the substrate 2 to the electrode 15. Simultaneously, it is driven with a large current by a composite operation, thereby largely reducing an ON resistance. |
