| 摘要 |
PURPOSE:To arbitrarily design a chip thickness by removing a brazing material which goes around a chip surface utilizing ion milling. CONSTITUTION:A brazing material 2 is placed on a semiconductor vessel 1, and heated at a temperature of 400-500 deg.C and melted to stick a chip 3 to a predetermined position. Thereupon, the chip 3 is pressurized from the upper thereof and thereby moved transversely, for good bonding, i.e., so as not to permit any bubble to be produced between the chip 3 and the brazing material 2, allowing an additional fraction of the brazing material to go around the chip surface. Thereafter, ion milling is effected where accelerated ions are forced to collide with the chip and the principal surface of the semiconductor vessel for ion etching. Hereupon, when Au is employed as the brazing material and Al as the chip electrodes, respective etching rates are different by five times as Au 1000Angstrom /min and Al 200Angstrom /min. This enables the additional fraction of the brazing material to be removed. Hereby, the chip thickness can arbitrarily designed. |
