| 摘要 |
PURPOSE:To make source resistance in a bipolar transistor well reproducible, uniform without increasing the number of manufacturing processes, by causing a source electrode in a bipolar transistor to be defined by the formation of side wall film covering the side of a gate electrode in a MOS transistor and simultaneously by the width of a mask film which is formed on a base region. CONSTITUTION:Gate electrodes 7N and 7P and electrode wiring thereof are formed by performing a patterning step for forming gate insulating films 6 as well as a polycrystal silicon film and a p<-> type base region 9 is formed with ion implantation by using a part other than parts to be used for forming a bipolar transistor as a mask. Further, side wall films 10A are formed at the sides of the gate electrodes 7N and 7P and also mask films 10B coating base resistance regions are formed by performing the formation of dioxide silicon films as well as mask films and anisotropic etching respectively. And then, p<+> type base and contact regions 11 are formed with ion implantation by using a part where a p-type channel transistor is to be formed as the mask and an n<+> type emitter region 14 is formed with ion implantation by using a part where an emitter region is to be formed as the mask. |
