| 摘要 |
<p>A method is provided for detaching a single-crystal film (32) from an epilayer/substrate crystal structure (30) or bulk crystal structure (10B). The method includes the steps of implanting ions (38) into the crystal structure to form a damage layer (36) within the crystal structure at an implantation depth below a top surface of the crystal structure, and chemically etching the damage layer to effect detachment of the single crystal film from the crystal structure. The method of the present invention is especially useful for detaching single-crystal metal oxide films from metal oxide crystal structures.</p> |
