| 摘要 |
PURPOSE:To write or erase data in a memory without separately necessity of an ultraviolet ray irradiating unit by forming by growing bumps controlled in their density and size at the side of a polycrystalline silicon gate of a first layer corresponding to a polycrystalline silicon gate of a second layer, and varying a voltage to be applied to the gate of the second layer. CONSTITUTION:Bumps 4a controlled in their density and size are formed by growing on the surface of a polycrystalline silicon gate 4 of a first layer. In order to erase written data, a silicon substrate 1, a source diffused layer 7a and a drain diffused layer 7b are all grounded, and a positive voltage, such as approx. 30V is applied to a polycrystalline silicon gate 6 of a second layer thereby to attract electrons (data) stored in the gate 4 to the gate 6 by utilizing an end discharge from the bumps 4a, thereby erasing the data. |
