| 摘要 |
PURPOSE:To improve the amplification factor of an electric current, while causing diffusion of both an emitter layer and source and drain layers of FET to have something common with one another, by carrying out diffusion, through which introduced impurities are formed into the emitter layer as well as the source and drain layers simultaneously by heat-treatment in such a way that they have the same conductivity type after opening windows at an oxide film for diffusing to the emitter layer and also after ion-implanting selectively the impurities through the windows provided in the oxide film. CONSTITUTION:A photoresist film 10 is extensively coated on an oxide film 7 and on a gate oxide film 8 and windows 10a are opened by etching at places where an emitter layer and a collector connecting layer are to be formed and further, the windows 7a for diffusing impurities are provided by etching. A resist film 10 is removed and other photoresist film 11 is coated. Then, the window 11a for ion implantation to an emitter layer 13 as well as to a collector connecting layer 14 and the window 11b for a source and drain layer 12 are punched and phosphorus, that is, an n-type impurity is driven. After removing a photoresist film 11 in succession from the completion of ion implantation, for example, the impurities are thermally diffused up to a predetermined depth at the emitter, collector connecting,and source and drain layers 13, 14, and 12 by treating with heat at a temperature 1100 deg.C for about an hour. |
