| 摘要 |
PURPOSE:To eliminate a malfunction of a memory circuit due to alpha rays by a method wherein a coating film of a polyimide resin or a polyimide isoindolo quinazolinedione resin is formed on one main face of a semiconductor wafer where a region used to constitute the memory circuit has been formed. CONSTITUTION:A region used to constitute a memory circuit is formed inside a semiconductor region on one main face of a semiconductor wafer; a metal wiring layer having a bonding pad part 22 is formed on the region used to constitute the memory circuit. After that, a coating film 23 composed of a polyimide resin or a polyimide isoindolo quinazolinedione resin(PII resin) is formed on one main face of the semiconductor wafer where the region used to constitute said memory circuit has been formed. For example, a PII resin film 23 whose film thickness is 4-37mum is formed on a P-type silicon semiconductor substrate 21 constituting a memory circuit. A PII resin is coated by a spin-on operation, is heat-treated at 200 deg.C for one hour and is semi-hardened; a bonding pad part 22 is opened; after that, the resin is heat-treated at 350 deg.C for one hour and at 450 deg.C for ten minutes and is hardened completely. |
