| 摘要 |
<p>This invention relates to a semiconductor device capable of suppressing the fluctuations of the supply voltage by forming a power supply capacity composed of PN junction between power supply wiring layers. In this invention, a first impurity diffusion region of a first conductive type is formed on a semiconductor substrate of the first conductive type, and a conductive film containing an impurity of a second conductive type is formed on the semiconductor substrate surface, and a second impurity diffusion region of the second conductive type is formed in the semiconductor substrate by diffusing the impurity contained in the conductive film, and the first and second impurity diffusion regions are connected to the first and second power supply wiring layers, respectively. In this constitution, the power supply capacity composed of the semiconductor substrate and the second impurity diffusion region is connected between the first and second power supply wiring layers, and fluctuations of the supply voltage can be suppressed. What is more, since the conductive film is formed on the surface of the second impurity diffusion region, the total resistance of the conductive film and the second impurity diffusion region may be sufficiently lowered. Therefore, the resistance element connected in series to the power supply capacity is reduced, and the fluctuations of the supply voltage may be effectively suppressed. Moreover, since the power supply capacity is composed of PN junction, it becomes stronger against the surge than the structure of using the gate electrode of MOS transistor.</p> |
