| 摘要 |
PURPOSE:To obtain a semiconductor laser element which is operated stably up to a high output in transverse fundamental mode by a method wherein a current constriction layer is provided at both ends of a stripe-like mesa-shaped clad layer and at least a part near one reflection face is made transparent or the like. CONSTITUTION:At least a double heterostructure composed of a first semiconductor clad layer 2, a second semiconductor active layer 3 and a third semiconductor clad layer 4 which have been laminated one after another on a semiconductor substrate 1 is contained; the third semiconductor clad layer 4 has a stripe-like mesa shape along an axial direction of a resonator in which a beam is guided; at least its part near a reflection face on one side is made transparent; a fourth semiconductor current- constriction layer 11 is formed in a part other than said stripe-like mesa shape. For example, a first semiconductor clad layer 2, a second semiconductor active layer 3 of a quantum well type, a third semiconductor clad layer 4 are formed on a semiconductor substrate 1; after that, an impurity is diffused in a neighboring region including a part used as an end face of a semiconductor laser element; the active layer 3 of the quantum well type is made a mixed crystal, and is made transparent with reference to a laser oscillation wavelength. |
