| 摘要 |
PURPOSE:To manufacture a Bi-MIS semiconductor device whose currentamplification factor of a bipolar transistor part is large and whose high- speed characteristic is excellent in a simple manufacturing process by a method wherein an emitter layer of the bipolar transistor part and a gate electrode of an MIS-FET are formed in such a way that they are grown simultaneously by using an identical heterogrowth material. CONSTITUTION:A gate insulating film 16 is formed on a silicon substrate 1 of an MIS-FET part by using the silicon substrate 1 which has completed a preliminary process used to form a collector region 3 and a base region 7 of a bipolar transistor and another preliminary process which has not yet formed a gate electrode of the MIS-FET. Then, the silicon substrate 1 in an emitter formation region 30 of the bipolar transistor part is exposed; a material whose band gap is larger than silicon and which can be heterojoined to silicon, e.g., B-SiC, is formed by vapor growth on a bipolar transistor region and an MIS- FET formation region 6 of the substrate. Then, while said heterojunction material on the emitter formation region 30 of the bipolar transistor part and a channel region of the MIS-FET is left, the material is removed; an emitter layer 26 and a gate electrode 27 are formed. |
