发明名称 METHOD FOR FORMING BY LOW PRESSURE DEPOSITION A LAYER OF INSULATING MATERIAL ON A SUBSTRATE, AND PRODUCT OBTAINED THEREBY
摘要 Treatment of material surfaces. The formation method according to the invention comprises: maintaining in a container an oxidizing medium for the material to be transferred; causing, according to stable parameters, the transfer of material to form on the substrate at least one prelayer having a thickness smaller than that of the insulating layer to be obtained; interrupting the formation of said prelayer; subjecting during a predetermined time duration the deposited atoms or molecules forming the prelayer to an oxidation in order to perfect their chemical binding and their mutual organization ; growing again on the prelayer a layer of insulating material according to the same stable parameters up to the obtention of the desired thickness. Application to the fabrication of electronic components.
申请公布号 DE3569578(D1) 申请公布日期 1989.05.24
申请号 DE19853569578 申请日期 1985.10.09
申请人 ETABLISSEMENT PUBLIC DIT: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS) 发明人 BLANCHET, ROBERT;SANTINELLI, CLAUDE
分类号 C23C14/02;C23C14/08;C23C14/24;(IPC1-7):C23C14/08;H01G4/10;H01L21/316 主分类号 C23C14/02
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