发明名称 |
METHOD FOR FORMING BY LOW PRESSURE DEPOSITION A LAYER OF INSULATING MATERIAL ON A SUBSTRATE, AND PRODUCT OBTAINED THEREBY |
摘要 |
Treatment of material surfaces. The formation method according to the invention comprises: maintaining in a container an oxidizing medium for the material to be transferred; causing, according to stable parameters, the transfer of material to form on the substrate at least one prelayer having a thickness smaller than that of the insulating layer to be obtained; interrupting the formation of said prelayer; subjecting during a predetermined time duration the deposited atoms or molecules forming the prelayer to an oxidation in order to perfect their chemical binding and their mutual organization ; growing again on the prelayer a layer of insulating material according to the same stable parameters up to the obtention of the desired thickness. Application to the fabrication of electronic components. |
申请公布号 |
DE3569578(D1) |
申请公布日期 |
1989.05.24 |
申请号 |
DE19853569578 |
申请日期 |
1985.10.09 |
申请人 |
ETABLISSEMENT PUBLIC DIT: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS) |
发明人 |
BLANCHET, ROBERT;SANTINELLI, CLAUDE |
分类号 |
C23C14/02;C23C14/08;C23C14/24;(IPC1-7):C23C14/08;H01G4/10;H01L21/316 |
主分类号 |
C23C14/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|