| 摘要 |
PURPOSE:To obtain a semiconductor device which actually eliminates a need for an alignment tolerance during a lithographic process and which can reduce a contact resistance value between a gate electrode and a diffusion layer by a method wherein a low-resistance conductive film connecting the diffusion layer to a control electrode layer electrically is formed on the diffusion layer and the control electrode layer in such a way that it comes into contact with these layers and is extended on these layers. CONSTITUTION:A diffusion layer 3 is formed in a predetermined region of a semiconductor substrate 1 ; an insulating film 11 is formed on a region in one part of the diffusion layer 3; control electrode layers 4, 5 are formed on the insulating film 11; a low-resistance conductive film 10 which connects said diffusion layer 3 to the control electrode layers 4, 5 electrically is formed. In this semiconductor device, said low-resistance conductive film 10 is formed on the diffusion layer 3 and the control electrode layers 4, 5 in such a way that it comes into direct contact with these layers and is extended on these layers. For example, a refractory metal film 10 of tungsten, titanium or the like is formed in such a way that it comes into contact with a diffusion layer 3 and is extended on this layer and that it comes into contact with a refractory metal silicide film 5 and is extended on this film. In addition, a CVD oxide film 7 as an interlayer insulating film is formed on the diffusion layer 3, the refractory film 10 and the refractory metal silicide film 5. |
