| 摘要 |
<p>For cleaning substrates in a cleaning device (10), a reaction furnace (14) of the cleaning device in which a substrate (12) has been installed is evacuated and then supplied with a reducing gas, and a natural oxide film on the substrate is removed by heating it in an atmosphere of reducing gas (32a), the reaction furnace is then evacuated and a reactive gas (32b) is introduced into the reaction furnace, and contaminants on the substrate are removed by etching the substrate in the reactive gas that has been chemically activated by UV radiation (22).</p> |
