Semiconductor memory circuit having an improved restoring scheme.

摘要

A dynamic memory circuit which can operate at a high speed and with a reduced amount of current noise is disclosed. The memory circuit includes dynamic type memory cells which necessitate restoring operation for rewritting read out data thereto, a read circuit for performing a read out operation in response to an active level of an externally supplied control signal and a restore circuit for performing the restoring operation in response to change of the externally supplied control signal to its inactive level.