| 摘要 |
<p>A static random access memory includes an array of memory cells (MC) connected to a pair of bit lines (eg, BL1, BL1). Selection of a memory cell is performed by decoding an address using a dynamic address decoder (8,9). The bit lines and the decoder are restored to respective predetermined voltage levels. Restoration of the dynamic decoder is performed during the sensing of memory data; and restoration of the bit lines is performed before or during address decoding.</p> |
