A transistor having a low impurity-concentration base.

摘要

There is disclosed a transistor composed of an emitter region of first conductivity type, a collector region of the first conductivity type and a base region of second conductivity type positioned between the emitter and collector regions, the peak value of the impurity concentration of the base region being between 2 x 10<1><6> cm<-><3> and 1 x 10<1><7> cm<-><3>.