| 摘要 |
PURPOSE:To increase the load of a stored charge in a passivle element region and to contrive the miniaturized formation of a device by a method wherein the passive element region between the sidewall surfaces of one block is taken wide. CONSTITUTION:Grooves 12 and 13 are formed on the side of the main surface 11 of a substrate 10 to section into a multitude of regions and blocks 14 are constituted. A capacitor region 16 is provided between the sidewall surfaces of one block and the grooves 12 and 13 and conducting layers 22 and 23 are formed. Moreover, an electrode layer 24 and an isolation region 25 are formed on the surface of the layer 23. By this constitution, the wide area of a capacitor can be secured. Thereby, a sufficiently large charge is stored in the region 16 and the microscopical formation of a device can be contrived without causing a reduction in reliability due to a soft error and so on. |
