| 摘要 |
PURPOSE:To prevent noise from being mixed in normal electric charge, by providing a photoshield film on the entire surface of an insulation film on the surface of a semiconductor substrate. CONSTITUTION:A light shield film 4' made of alumum vapor-deposited layer is provided on the entire surface of an insulation film 2' on the surface of a semiconductor substrate 1, in addition to the vicinity of surrounding of an image pickup function section consisting of a photodetection section A having a photoelectric conversion region (a) and a charge transfer section having a gate electrode (c) and a transfer electrode (b), except an electrode pad 3 arranged at the ridge of the semiconductor substrate 1. The circumferential ridge of the electrode pad 3 and that of an opening of the light shield film 4' are overlapped via an inter-layer insulation film 2'. Thus, no light can enter the gap between the electrode pad 3 and the film 4'. Thus, the mixing of optical noise in charge under transfer can be prevented. |
