发明名称 SPUTTERING TARGET
摘要 PURPOSE:To obtain a sputtering target free from component distribution within a film-formation plane, having low oxygen content, and reduced in magnetic permeability by constituting a metallic structure in a casting-alloy target of a simple-substance phase of rare-earth metal and an alloy phase of rare earth metal and transition metal. CONSTITUTION:A casting-alloy target is sputtered to form a magneto-optical recording layer composed of a rare earth metal-transition metal alloy. In the above casting-alloy target, a metallic structure in the above is constituted of a simple-substance phase of rare-earth metal and an alloy phase of rare-earth metal and transition metal. It is preferable that the above sputtering target has a composition principally containing one or more light rare earth metals among Sm, Nd, Pr, and Ce and one or more heavy rare earth metals among Gd, Tb, and Dy and further containing one or more transition metals between Fe and Co. By this method, the target reduced in oxygen content, causing no component distribution within a film-formation plane, having low magnetic permeability, and suitable for use in magnetron sputtering can be obtained.
申请公布号 JPH01129964(A) 申请公布日期 1989.05.23
申请号 JP19870288646 申请日期 1987.11.16
申请人 SEIKO EPSON CORP 发明人 AOYAMA AKIRA;YAMAGISHI TOSHIHIKO;SHIMOKAWATO SATOSHI
分类号 C23C14/34 主分类号 C23C14/34
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