FORMATION OF METALLIC THIN FILM

摘要

PURPOSE:To form a good-quality metallic thin film with high productivity by depositing the metallic thin film at prescribed thickness from both gas incorporating a metallic element and gaseous SiH2Cl2 on the part free from an insulating thin film of a substrate heated at specified temp. CONSTITUTION:In the inside of a reaction tank under reduced pressure, a wafer 34 formed with insulating films 35 on one part of the surface of an Si substrate 1 is heated at 300-600 deg.C and a gaseous mixture of both gas incorporating a metallic element such as WF6 and gaseous SiH2Cl2 is introduced. In this case, flow rate ratio (SiH2Cl2/WF6) of gaseous WF6 and gaseous SiH2Cl2 is preferably regulated to 0.1-100. Thereby a metallic thin film 38 such as W is selectively deposited at about 1000Angstrom thickness on the part of the Si substrate 1 which is free from the insulating thin film and provided with an impurity diffusion layer 37. Thereafter gaseous H2 or reductive gas incorporating Si such as SiHxP4-x (x=1-4) and SiHyCly (y=0-4) is introduced and growth of a metallic thin film 39 is continued. The above-mentioned initial metallic thin film 38 is excellent in adhesion and barrier properties and the thin W film 39 can be formed in a contact hole 36 without impairing the substrate 1 ground.