发明名称 Developing solution for positive-working photoresist comprising tmah and non-ionic surfactant
摘要 The aqueous developing solution of the invention for positive-working photoresist compositions contains, in addition to an organic basic compound free from metallic ions, such as tetramethyl ammonium hydroxide and choline, as the principal ingredient, from 50 to 5000 ppm of an acetylene alcohol. In comparison with conventional developing solutions, the inventive developing solution is advantageous in the uniformity of the patterned photoresist layer, higher sensitivity and smaller temperature dependency of development and less drawbacks due to foaming of the solution.
申请公布号 US4833067(A) 申请公布日期 1989.05.23
申请号 US19880246930 申请日期 1988.09.19
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 TANAKA, HATSUYUKI;KOHARA, HIDEKATSU;SATO, YOSHIYUKI;ASAUMI, SHINGO;NAKAYAMA, TOSHIMASA;YOKOTA, AKIRA;NAKANE, HISASHI
分类号 G03C1/72;G03C5/18;G03F7/30;G03F7/32;H01L21/027;H01L21/30 主分类号 G03C1/72
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