发明名称 Semiconductor memory device having improved interconnection structure of memory cell array
摘要 A memory cell array is divided into two groups, one bit line of a pair of bit lines is connected to corresponding memory cells in the first group of the memory cell array, and the other bit line thereof is connected to corresponding memory cells in the second group of the memory cell array.
申请公布号 US4833518(A) 申请公布日期 1989.05.23
申请号 US19870094646 申请日期 1987.09.09
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 MATSUDA, YOSHIO;MASHIKO, KOICHIRO;ARIMOTO, KAZUTAMI;MATSUMOTO, NORIAKI;FURUTANI, KIYOHIRO
分类号 H01L27/10;H01L21/8242;H01L23/528;H01L27/108;H01L29/94 主分类号 H01L27/10
代理机构 代理人
主权项
地址