| 摘要 |
PURPOSE:To eliminate the need of providing a large loop to a metallic small- gage wire, and to improve manufacturing yield by shaping wiring patterns having the direction of an array crossing in the longitudinal direction of the metallic small-gage wire for bonding at positions lower than the surface of a semiconductor substrate. CONSTITUTION:A semiconductor substrate 1 is coated with a photo-resist 5, selective exposure is executed, and windows 6 are formed by a developer, thus exposing the semiconductor substrate 1. The semiconductor substrate 1 exposed to the windows 6 is etched to shape recessed sections 7. The photo-resist layer 5 is removed by a photo-resist removing liquid, and a photo-resist layer 8 is formed onto the surface of the semiconductor substrate 1 again. Openings 9 are shaped to sections corresponding to said windows 6... through selective exposure. 1000Angstrom Ti, 1000Angstrom Pt and 8000Angstrom Au are evaporated in the order, and a wiring metallic layer 10 is deposited. The photo-resist layer 8 is gotten rid of by using a photo-resist release liquid, the wiring metal 10 deposited on the photo-resist layer 8 is taken off, and a wiring layer 2 and electrode pads 4 are formed onto the semiconductor substrate 1. |
