DEVELOPING SOLUTION FOR POSITIVE TYPE PHOTORESIST

摘要

PURPOSE:To improve the selection ratio in the velocity of dissolution between the exposed and unexposed parts of a resist, defective development and the sharpness at the bottom by adding a specified nonionic surfactant and a quat. ammonium type cationic surfactant or a quat. ammonium compd. to an aq. soln. of org. quat. ammonium hydroxide. CONSTITUTION:A developing soln. is produced by adding a 'Pluronic(R)' and/or 'Tetronic(R)' type nonionic surfactant having 6-15 HLB prepd. by adding ethylene oxide to polypropylene glycol and a quat. ammonium type cationic surfactant or a quat. ammonium compd. to an aq. soln. of an org. quat. ammonium hydroxide. The developing soln. well wets the surface of a resist and can improve the selection ratio in the velocity of dissolution between the exposed and unexposed parts of the resist, defective development and the sharpness at the bottom without lowering the sensitivity of the resist. The soln. foams up hardly and can easily be handled.