| 摘要 |
PURPOSE:To improve conductivity, heat resistance and resistance against electromigration by forming a line having narrow pitches in a bit line and a word line by a high melting-point silicide based material and shaping a line having wide pitches by an Al group material. CONSTITUTION:The direction along a bit line 121, etc., is formed in the long side and the direction along a gate electrode 41, etc., as a word line in the short side in a memory-cell section MC. When a sense amplifier, etc., are disposed in the direction of the short side in such constitution, the pitches of the bit line 121 must be made narrower than those of the word line 41. Since the width of bit line 121 itself must be narrowed at that time, a high melting-point silicide group such as polycide is used as a material for the bit line 121 in order to cope with electromigration. Accordingly, Al is employed as electrode- wiring 141 as a substantially word line connected to the gate electrode 41, and width is taken widely and the electrode-wiring 141 is formed. |
