| 摘要 |
<p>PURPOSE:To obtain an X-ray absorber having a desired sectional form, by allowing a two-layer resist (electron beam resist/UV resist) located on a plated base formed on an X-ray transmission film substrate to form an electron resist having a T-type pattern and subjecting its resist to an extensive exposure by a UV-ray for an adequate time. CONSTITUTION:An X-ray absorber, for example, a plated base of Au is formed on an X-ray transmission film substrate and, a UV sensitive resist 17 is formed on the above base and further, for example, an electron beam resist 6 which exhibits excellent absorptivity of the UV-ray is formed to form a two-layer resist. Then, the electron resist 16 is exposed at a width of an opening cross section corresponding to an upper width of a desired T-type control electrode to obtain the pattern of the desired electron beam resist 16. Further, the X-ray absorber is plated through electrolysis on the X-ray transmission film substrate 9 in such a way as to allow its film to have a film thickness where the upper surface of the UV sensitive resist is not exposed. Then, the electron beam resist 16 and the UV sensitive resist 17 are etched and then, the plated base 19 corresponding to an upper width of the T-type control electrode is removed in such a way that plasma etching is carried out extensively and thus a desired form of the X-ray absorber is obtained. In this way, the number of manufacturing process is reduced and the accuracy of the T-type pattern can be improved.</p> |
