WIRING CONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To provide function of barrier, to prevent punch through and to prevent short circuit with a lower layer by laying a polycrystalline silicon layer under a connection where a thin polycrystalline silicon layer and a metal wiring layer are connected through a contact hole. CONSTITUTION:A polycrystallin silicon layer 3 which serves as a barrier and a polycrystalline silicon layer 5 of high resistance wiring material are electrically connected through a contact hole 7. The polycrystalline silicon layer 5 is electrically connected with a metal wiring layer 4 through the contact hole 8 on the connection of the polycrystalline silicon layer 5 and the polycrystalline silicon layer 3. Therefore, the polycrystalline silicon layer 3 and the metal wiring layer 4 are connected interposing the thin polycrystal layer 5 therebetween. In this way, the thick polycrystalline silicon layer 3 can prevent over-etching of contact hole of the metal wiring 4 and the thin polycrystalline silicon layer 5 by serving as a barrier. Deffective connection of the metal wiring 4 can be also thus avoided.