| 摘要 |
PURPOSE:To manufacture an SOI/MOSFET, in which integrated stray capacitance is decreased, by forming an insulating layer by laser recrystallizing SOI technology and O<+> ion implantation, and forming seeds in the device. CONSTITUTION:Resist 3 is applied on an insulating layer 1. Then the resist 3 is patterned. With said resist 3 as a mask, windows 4 for seed parts A and B are provided by dry etching such as RIE. A part of a substrate is exposed. Single crystal parts are grown through the seed parts A and B with CW argon laser. A polycrystalline silicon layer 5 is recrystallized, and single crystal part is obtained. Then, O<+> ions are selectively implanted(I.I.) into upper parts C and D on the seed parts A at 400keV and 1.5X100<18>/cm<2>. Thereafter, heat treatment is performed at a temperature of 1,250 deg.C for two hours in N2. Insulating layers 8 and 9 are continuously formed. Thus SOI(Silicon On Insulating Substrate) single crystal structure is obtained. Thereafter an insulating layer 10 is formed. Elements are isolated. Then the device is formed through the steps of an ordinary SOI/MOSFET (S.D.G is formed). A numeral 10 indicates a gate electrode. |
