| 摘要 |
PURPOSE:To make uniform the longitudinal length of N-type transistor formation diffusion region and P-type transistor formation diffusion region by setting the longitudinal length of 0D mask at the maximum within a range satisfying electric characteristics against the longitudinal length of a cell. CONSTITUTION:A semiconductor standard cell having function to latch data consists of a single P-type transistor region specified 0D mask 12 having a definite longitudinal length, and a single N-type transistor region specified 0D mask 14 having a definite longitudinal length. The longitudinal length of each transistor region specified 0D mask is set to the maximum within a standard cell outer frame C1 and designed to eliminate area invalid section. Since the 0D mask, which is conventionally made of two-stage composition, is made of a single one-stage composition instead, the longitudinal length of the semiconductor standard cell is controlled thus eliminating one of the causes which reduce area use efficiency. |
