| 摘要 |
PURPOSE:To check the state of the formation of photoresist patterns extremely simply at low cost by simultaneously forming photoresist patterns for inspection, which are arranged at regular intervals in both the vertical direction and the lateral direction and line width of which is thinned gradually, near the desired photoresist patterns. CONSTITUTION:When a metallic film electrode film 2 is formed onto a wafer substrate 1, photoresists 3 are applied onto the surface of the film 2 and desired patterns are exposed and shaped onto the resist films 3 by using a photomask, photoresist patterns 4 for inspection are exposed onto the resist film 3 near the desired patterns by the photomask. When the photoresists in non-exposure sections are removed through processing after the exposure, the photoresist patterns 4 for inspection are shaped near the desired photoresist patterns together with the desired photoresist patterns. |
