SEMICONDUCTOR DEVICE

摘要

PURPOSE: To obtain a high mutual conductance by forming an atomic flat layer composed of a third material composition for delta-doping a second semiconductor layer at a predetermined distance from a hetero-interface in the second semiconductor layer and bringing the doping density of the atomic flat layer high so as to give a desired barrier thickness at a distance shorter than a predetermined value. CONSTITUTION: A channel layer 31 has a thickness of about 1.0μm and an AlGaAs spacer layer 32 is grown to a thickness between 0Åand 100Å. A delta-doped layer 33 has an Si (n-type dopant) dose thinner than a submonolayer and contains carriers at a concentration of NδD=4.0×10<12> cm<-2> or more. A doner layer 34 and a cap layer 35 are grown to the thicknesses and carrier concentrations which are attained by the conventional technique. The delta-doped layer 33 is grown in the spacer layer 32 by substantially injecting a dopant (Si when n-type) into a part at a distance Ws from a hetero-interface by the amount corresponding to a prescribed submonolayer while the growth of the layer 32 is interrupted during the growth of the layer 32.