| 摘要 |
PURPOSE:To obtain an MESFET excellent for high frequency characteristic, by forming insulating compound of itself on the surface of gate metal with high accuracy to 0.1mum to utilize this for selfalign to determine the interval between source and gate. CONSTITUTION:A gate electrode 5 is provided directly on a semiconductor material operating layer 2 on a substrate 1 with the source electrode 3 and drain electrode 4 provided on the semiconductor material operating layer 2 close to the gate electrode 5. A metallic compound film 5' for the gate electrode is provided around the gate electrode 5. The parasitic resistance between the source and gate is reduced by such a structure to enlarge MESFET characteristic to higher frequency region mutiplied with the effect of short gate length. |
