发明名称 FORMATION OF INSULATION OF HIGH-DENSITY MULTILAYER INTERCONNECTION SUBSTRATE
摘要 PURPOSE:To prevent the remaining of fillers in a via hole section, and to improve crack-resistant insulating properties by combining a first layer of a polyimide film of thin coating and a second layer of filler polyimide film of thick coating to form an interlayer insulating layer. CONSTITUTION:A wiring pattern 2 is formed onto a substrate 1, and a first layer is coated with a photosensitive polyimide film 3' in thin coating and a second layer with a photosensitive filler polyimide film 4' in thick coating, and the film 4' is exposed and developed with ultraviolet rays through a glass mask 5. No filler is left on the bottom of a via hole section, and a section not irradiated is removed. An interlayer insulating layer consisting of a filler polyimide film 4 in thick coating containing SiO2 is formed onto a polyimide film 3 in thin coating through curing and imidation.
申请公布号 JPH01129495(A) 申请公布日期 1989.05.22
申请号 JP19870289925 申请日期 1987.11.16
申请人 NEC CORP 发明人 TAMURA HIROYOSHI
分类号 H05K3/46 主分类号 H05K3/46
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