| 摘要 |
PROBLEM TO BE SOLVED: To maintain a fixed threshold voltage of a device, even when a channel width is narrowed by reducing the doping concentration at the periphery of a gate electrode. SOLUTION: A first conductive-type well 22 and a second conductivity-type well 23 are formed in a prescribed region of a semiconductor substrate 21. Then, an isolating region 33 is formed between the first conductivity-type well 22 and the second conductivity-type well 23. A first gate insulating film 24a and a first gate electrode 25e are laminated on the first conductivity-type well 22, and a second gate insulating film 24b and a second gate electrode 25f are laminated on the second conductivity-type well 23. In the edge region of the first gate electrode 25e, a first conductivity-type counter doping region 25c is formed, and in the edge region of the second gate electrode 25f, a second conductivity type counter doping region 25d is formed. Then, on the first and second gate electrodes 25e and 25f and the first and second conductivity type counter doping regions 25c and 25d, a metal silicide layer 34 is formed. As a result, a fixed threshold voltage can be maintained.
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