| 发明名称 |
A PROCESS FOR ANNEALING AN ION IMPLANTED GALLIUM ARSENIDE SUBSTRATE |
| 摘要 |
An ion implanted gallium arsenide substrate is annealed by maintaining it at a temperature above about 400 DEG C in an arsenic-containing gaseous ambient on all sides of the substrate, and heating the gallium arsenide substrate with broad area incoherent light. |
| 申请公布号 |
DE3569435(D1) |
申请公布日期 |
1989.05.18 |
| 申请号 |
DE19853569435 |
申请日期 |
1985.07.09 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HOVEL, HAROLD JOHN;KUECH, THOMAS FRANCIS |
| 分类号 |
H01L21/26;H01L21/265;H01L21/268;H01L21/324;(IPC1-7):H01L21/324 |
主分类号 |
H01L21/26 |
| 代理机构 |
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代理人 |
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