| 摘要 |
PURPOSE:To form respective electrodes with minute dimensions finer than the resolution of a photolithography technology and avoid a short-circuit failure between the adjacent electrodes and a short-circuit failure between a contact aperture and a different electrode by a method wherein electrode patterns are formed in the apertures of the respective electrodes formed in an insulating film on a semiconductor substrate in a self-alignment manner. CONSTITUTION:Apertures 11o for ohmic electrode patterns are formed in a 3rd silicon oxide film 7. After that, an n-type impurity is diffused by heat into a silicon substrate 1 to form ohmic contact layers 20. After an aperture for a Schottky electrode pattern is formed between both the apertures 11o, a molybdenum film 21 is evaporated over the whole surface of a semiconductor chip as a Schottky metal film. After the part of the molybdenum film 21 other than the parts in the apertures 11o and 11s is removed by etching, the silicon oxide film 7 in the aperture 11s and around it is covered and protected by a photoresist layer 10a. Then the molybdenum films 21 in the apertures 11o for the ohmic electrode patterns are removed and an Al layers 16a is evaporated. over the whole surface of the semiconductor chip to form a Schottky electrode 22 and ohmic electrodes 23. |
