发明名称 METHOD FOR CORRECTING DEFECT OF MASK
摘要 PURPOSE:To correct a black defect with high accuracy by focusing the ion beam from a high-illuminance ion source to a micro spot by a charge particle optical system then by projecting said beam to the black defect of a mask while preventing the disturbance of the spot, thereby removing the defect. CONSTITUTION:A mask sample 90 having the black defect is imposed on a sample base 60 in an exchange chamber 41 and is then put into a sample chamber 40 where the sample is imposed on a base 55. The inside of the chamber 40 is evacuated by a vacuum system to a vacuum and a high-voltage power supply 82 and a control device 85 are operated to impress voltages to respective electrodes by a power supply 77 for filament of a liquid metal ion source 65, an electrode power supply 78, an ion beam electrode source 79, and a deflecting electrode power supply 84. The sample 90 is first scanned by an ion beam spot 68' of several 10kV or below and is macro-displayed on a cathode ray tube 88. Then, an operator observes the black defect. In succession a negative voltage of several 10kV is impressed to the sample and the ion beam spot 68' is projected to the black defect. The black defect of the mask is corrected with the high accuracy by such constitution.
申请公布号 JPH01124856(A) 申请公布日期 1989.05.17
申请号 JP19880244067 申请日期 1988.09.30
申请人 HITACHI LTD 发明人 YAMAGUCHI HIROSHI;MIYAUCHI TAKEOKI;SHIMASE AKIRA;HONGO MIKIO
分类号 G03F1/00;G03F1/72;G03F1/74;H01L21/027;H01L21/30 主分类号 G03F1/00
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