| 摘要 |
PURPOSE: To obtain sub-micron resolution from lithography by forming a side- wall spacer in an opening by patterning a first layer on a semiconductor substrate for forming the opening for exposing the surface part of a semiconductor and growing a material on the internal surface of the opening where the side- wall spacer is not formed, and then, correcting the exposed semiconductor part by removing the side-wall spacer. CONSTITUTION: The part of a first low-temperature oxide layer 7 is exposed by forming an opening by patterning a silicide layer 9 and a second low- temperature oxide layer 11 and the opening is filled up with a nitride plug. After silicon is grown on an Si substrate exposed in the opening having an internal surface coated with a side-wall spacer, the spacer 13 is removed. Then a base layer 19 and emitter layer 21 are formed by continuously implanting ions and a polysilicon layer 23 is formed. After the layer 23, an oxide cap 25 is formed by partially oxidizing the polysilicon layer 23. Finally, an opening for contact and metallization is formed by removing an oxide layer 15 and exposing part of the surface of an epitaxial layer 3, and then, forming a passive base layer 27.
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