发明名称 SKYDDSFOERFARANDE FOER EFFEKTTRANSISTOR
摘要 A protective method is described for a power transistor in which the collector-emitter voltage thereof is measured when the transistor is turned on and then the base control of the transistor is switched off to turn off the latter when this collector-emitter voltage exceeds a particular magnitude. When the transistor is switched back into the on state, the current peak of the transistor can rise to a rather high magnitude at any switching time as a result of which the service life of the transistor can be considerably shortened. This problem is eliminated by the fact that the transistor is only switched back to the on state under the condition that its collector-emitter voltage is close to zero, that is to say below a predetermined nominal value. <IMAGE>
申请公布号 FI822403(L) 申请公布日期 1984.01.08
申请号 FI19820002403 申请日期 1982.07.07
申请人 OY HELVAR 发明人 KOPONEN, KARI
分类号 H03K17/082 主分类号 H03K17/082
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