| 摘要 |
PURPOSE:To decrease processes for production and to improve yield by forming picture element electrodes on a transparent insulating film, then dyeing a part of the transparent insulating film with the formed picture element electrode as a mask, thereby forming the light shielding part of a thin-film transistor. CONSTITUTION:A gate electrode 12, the insulating film 14, and semiconductor films 14, 15 are laminated on a substrate 11. Further, a conductive material is deposited and patterned to form a channel part consisting of a drain electrode 17 and a source electrode 18. The dyeable transparent insulating film 20 provided with a contact hole 20a is formed thereon. The transparent conductive material is deposited on the film 20 and the hole 20a and the conductive film part in the upper direction of the channel part is removed and is separated to the picture element electrodes 19a, 19b. The substrate 11 is thereafter immersed in a dyeing liquid and part of the exposed film 20 is dyed by a black coating compd., by which the light shielding part 16 is formed. The processes for production are thereby decreased and the yield is improved. |
