| 摘要 |
PURPOSE:To obtain a copied image which has decreased image defects and has excellent image quality by supplying high-frequency electric power in such a manner that the decomposition rate of gaseous silane to be introduced attains the range of 60-85% of the satd. decomposition rate thereof. CONSTITUTION:A photoconductive layer of an amorphous silicon system is formed on a base by a plasma CVD method using the gaseous silane as a gaseous raw material. The high-frequency electric power is so supplied that the decomposition rate of the gaseous silane to be introduced attains the range of 60-85% of the satd. decomposition rate thereof. The decomposition rate of the gaseous silane is obtd. by measuring the height of the peaks before and after the electric discharge by a mass spectrographic apparatus and calculating the decomposition rate by the equation I. The satd. decomposition rate of the gaseous silane refers to the saturated decomposition rate obtd. by specifying the pint of the time when the increase of the silane decomposition rate decreases to <=5% with respect to 0.1W/cm<2> increase of the electric power density in the case of applying the high-frequency electric power to the gaseous silane introduced at a prescribed flow rate into the plasma CVD device under a prescribed pressure and increasing the power density successively as 100% (decomposition rate of the gaseous silane and determining said point of the time as the satd. decomposition rate. |
