| 摘要 |
PURPOSE:To prevent the electrostatic breakdown of an insulating film and to improve an yield by a constitution wherein a part of a conductor film forming a memory capacity is made to contact directly with a layer provided on an Si substrate and having a conductivity type reverse to that of the substrate. CONSTITUTION:A field oxide film 12 and a gate oxide film 13 are provided on a P type Si substrate 11, and a part of the oxide film 13 is removed. Then, a poly Si 14 is superposed thereon and P diffusion is applied thereto, whereby the resistance of the layer is lowered and an N<+> layer 15 is formed. The poly Si 14 is etched by reactive ions with a photoresist mask 16 provided. Next, the mask 16 being removed, a cover is made with an insulating film 17, and an Al wiring 18 is fitted through a window made in the film 17. Since the poly Si gate 14 is in contact with the P type substrate 11 through the intermediary of the N<+> layer 15 in this constitution, a charge generated on the occasion of the reactive ion etching escapes easily to the substrate 11. Therefore, no extraordinary increase in an electric field occurs in the gate insulating film 13, no dielectric breakdown occurs therein, and thus an yield can be improved. |
