| 摘要 |
PURPOSE:To prevent occurrence of a large warppage and a slip line detrimental to the subsequent treatment process by a method wherein the part in the vicinity of the outer periphery of a semiconductor wafer is additionally heated by an auxiliary heating source so as to uniformize the temperature all over the wafer. CONSTITUTION:An auxiliary heating source 2, which is composed of a halogen or infrared bulb and provided with an annular sealed body made of quartz glass as well as a filament 2b within the sealed body, is arranged on the lower or upper side of a wafer 1 in contact with the surface of an outer peripheral part 1c or a part 1b in the vicinity of the outer periphery of the wafer 1. While the wafer 1 is subjected to main heating on both sides by receiving light irradiation from a planar light source from both above and below, the part 1b in the vicinity of the outer perihery is additionally heated by the auxiliary heating source 2. It is thus possible to make very small the temperature difference between a center part 1a and the part 1b in the vicinity of the outer periphery, and to uniformize the temperature all over the wafer 1. |
