发明名称 HEATING DEVICE FOR SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To obtain a heating device for semiconductor devices characterized by continuous heating temperature gradient, low probability in failure, and high reliability by constructing the title device of a single heat block whose sectional areas vary depending on the heating temperature gradient and a single heat source heating such heat block. CONSTITUTION:A heat block 1 consists of a single rod material which is rectangular when viewed from the top and is disposed horizontally. Its sectional areas in each position throughout the length are caused to change so that they are proportional to a heating temperature gradient required for a semiconductor device to be heated. In other words, the top surface 1a of the heat block 1 upon which the semiconductor device is to be mounted is made flat throughout its length, whereas its bottom surface is so formed as to be tapered surfaces 1b, 1b whose thicknesses gradually increase from the ends towards the center lengthwise. Onto the bottom side at the center of the heat block 1 a single heat source such as an electric heater is embedded and a thermocouple 3 is embedded therein for detecting the temperatures.</p>
申请公布号 JPH01124224(A) 申请公布日期 1989.05.17
申请号 JP19870282563 申请日期 1987.11.09
申请人 MITSUBISHI ELECTRIC CORP 发明人 OMAE SEIZO
分类号 H01L21/52;H01L21/60 主分类号 H01L21/52
代理机构 代理人
主权项
地址