Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors
摘要
Semi-insulating epitaxial layers of Group III-V based semiconductor compounds are produced by a MOCVD process through the use of organic titanium-based compounds. Resistivities greater than 1x107 ohm/cm have been achieved.
申请公布号
US4830982(A)
申请公布日期
1989.05.16
申请号
US19870059133
申请日期
1987.06.04
申请人
AMERICAN TELEPHONE AND TELEGRAPH COMPANY;AT&T BELL LABORATORIES
发明人
DENTAI, ANDREW G.;JOYNER, JR., CHARLES H.;WEIDMAN, TIMOTHY W.;ZILKO, JOHN L.
