Method of manufacture a primos device

摘要

A PRIMOS (Planar Recessed Isolated MOS) transistor and a method for fabricating same is described wherein the source and drain in a semiconductor body are separated by a recess. A gate oxide is disposed on the body in the recess, with conductive gate material thereon. Oxide regions are positioned on each side of the gate, such oxide regions being substantially thicker in cross-section than the gate oxide. The method described teaches fabrication of this device.