| 摘要 |
PURPOSE:To eliminate channeling and to obtaina shallow P-type semiconductor region, by depositing boron glass by the deposition of boron nitride, and thereafter diffusing the boron glass, and forming the P-type semiconductor region. CONSTITUTION:An element isolating oxide film 2, a gate electrode 3 and an insulating film 5 are formed on a substrate 1. The insulating film 5 at the specified positions is removed so as to form source and drain regions. A thin polysilicon or oxide film 6 is formed on the substrate 1. Boron glass is deposited on the film 6 by the diffusion of boron nitride. The boron glass 7 is deposited by a boron glass diffusing method. When the substrate 1 is annealed at low temperature, a P<+> diffused layer 4 is formed at the source/drain parts. The glass 7 and the oxide film 6 are removed by etching. Thus channeling is eliminated, and a shallow P-type semiconductor region is obtained. |
