| 摘要 |
PURPOSE:To make an element group into a planar and thereby to facilitate the wiring of an electrode on the P side, by burying a half-insulating or P<-> type AlGaAs layer in a mesa part. CONSTITUTION:An N<-> type GaAs layer 2 is formed epitaxially on a half-insulating GaAs substrate 1 and an etched groove 3 is provided therein. Then, the groove is filled up with P<-> type Alx Ga1-xAs 6 grown in liquid phase, and an active layer is superposed thereon. After the layers 6 and 7 are patterned, a p layer 8 and an electrode 9 are provided on one N<-> layer 2 separated from the other, and thereby a light-receiving element is completed. Meanwhile, electrodes 10-12 are provided on the active layer 7 on the other N<-> layer 2, and thereby FET is completed. This constitution makes it possible to make a semiconductor device into a planar, and thus the electrode on the P side can be wired with case without line junction or wiring through a mesa part positioned deep, which has been an usual practice so far. |
