| 摘要 |
PURPOSE:To obtain the preferable accuracy of a pattern and to perform an alignment by forming a stencil on a membrane having silicon on its surface, and selectively growing an X-ray absorber pattern made of tungsten on the surface of the membrane except at the stencil. CONSTITUTION:A membrane made of silicon Si or BN or the like having silicon on its surface is employed, a stencil 5 of a desired pattern is formed thereon, an X-ray absorber of tungsten W is selectively grown on the surface of the membrane having the silicon surface except the stencil 5, thereby forming an X-ray absorber pattern 24. Accordingly, the stencil can remain, and an alignment with a light is performed. Thus, the balance of a stress is held thereby to improve the accuracy of the pattern. Thus, an X-ray exposure mask in which the surface is flattened and which is scarcely broken is obtained. |
