| 摘要 |
PURPOSE:To improve controllability of the depth of a dug part and to stabilize its quality by sequentially growing a current blocking layer on a first conductivity type substrate, removing by etching a part of the blocking layer, and growing a cap layer on the blocking layer and a stopper layer. CONSTITUTION:After a first clad layer 2, an active layer 3, a second clad layer 4, a stopper layer 5 and a current blocking layer 6 are sequentially grown by a liquid epitaxial growing method on a substrate 1, the layer 6 is selectively etched to form a dug part 8 with an etchant based on ammonia and H2O2. Then, when a cap layer 7 is grown by an MOCVD method, an element is completed. That is, it is provided among the layer 5, the layer 4 and the layer 6 in this manner, and only the layer 6 of a light emitting section is selectively etched, thereby maintaining the depth of the part 8 constant. Accordingly, the layer 4 is not etched, thereby holding the thickness uniform. |
